收藏本站
HiPerFET TM Power MOSFETs IXFR 180N10 V DSS = 100
V
I D25
ISOPLUS247 TM
(Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary data
= 165 A
R DS(on) = 8 m W
t rr ￡ 250 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
100
100
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C (MOSFET chip capability)
± 20
± 30
165
V
V
A
G
D
Isolated back surface*
I D(RMS)
I DM
I AR
E AR
E AS
dv/dt
P D
External lead (current limit)
T C = 25 ° C, Note 1
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
76
720
180
60
3
5
400
A
A
A
mJ
J
V/ns
W
G = Gate
S = Source
* Patent pending
Features
D = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
? Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
T L
1.6 mm (0.063 in.) from case for 10 s
300
° C
- 2500V electrical isolation
? Low drain to tab capacitance(<25pF)
V ISOL
Weight
50/60 Hz, RMS
t = 1 min
2500
5
V~
g
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? DC-DC converters
? Battery chargers
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 20 V, V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 90A
Note 1
T J = 25 ° C
T J = 125 ° C
100
2.0
V
4.0 V
± 100 nA
100 m A
2 mA
8 m W
? Switched-mode and resonant-mode
power supplies
? DC choppers
? AC motor control
Advantages
? Easy assembly
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98584A (7/00)
1-2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFR180N15P MOSFET N-CH 150V 100A ISOPLUS247
IXFR18N90P MOSFET NCH 900V 10.5A ISOPLUS247
IXFR200N10P MOSFET N-CH 100V 133A ISOPLUS247
IXFR20N100P MOSFET N-CH 1000V 11A ISOPLUS247
IXFR20N120P MOSFET N-CH 1200V 13A ISOPLUS247
IXFR20N80P MOSFET N-CH 800V 11A ISOPLUS247
IXFR21N100Q MOSFET N-CH 1KV 18A ISOPLUS247
IXFR230N20T MOSFET N-CH 200V 156A ISOPLUS247
相关代理商/技术参数
IXFR180N15P 功能描述:MOSFET 94 Amps 150V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR1871 制造商:Ixys Corporation 功能描述:IXFR1871
IXFR18N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR200N10P 功能描述:MOSFET 133 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR200N10P_06 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Polar HiPerFET Power MOSFET
IXFR20N100P 功能描述:MOSFET 20 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR20N120P 功能描述:MOSFET 26 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR20N80P 功能描述:MOSFET 10 Amps 800V 0.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube